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ALD Atomic Layer Deposition System

Author: [Time]:2022-08-30 [Source]: [ClickTimes]:

Instrument model: MNT-S100-L3S2

Manufacturer: MICRODYN-NADIR

Specifications and technical parameters:

1. Equipped with 6 metal precursor source delivery lines, 1 room temperature source, 2 heating sources, 2 carrier gas auxiliary sources, 1 reserved, equipped with carrier gas lines and mass flow controller (brand Hariba).

2. Precursor source delivery pipeline are wrapped in heating jacket, the highest heating temperature up to 250 ℃, configured temperature sensor, temperature control accuracy to meet ± 1 ℃.

3. The ALD special valve (brand Swagelok) is a three-hole valve with its own purge function, with a response time of less than 5 ms, and a high-temperature resistant actuator that can withstand temperatures up to 200°C.

4. The background vacuum of the equipment is 0.67 Pa, and the leakage rate of the equipment is ≤ 5×10-10 Pa-m3/s.

Features and functions:

It is a vapor deposition equipment for depositing single atomic layers of ultra thin films. The atomic layer deposition technology has a wide potential for applications in the fields of micro and nano electronics and nanomaterials due to its highly controllable deposition parameters (thickness, composition and structure), excellent deposition uniformity and consistency.

Attachments and Configurations:

Atomic layer deposition system mainframe, reaction chamber, precursor source delivery system, vacuum system, control system

Reservation Websitehttp://202.113.64.51/genee/